Direct PCIe 3.0 x4 connection for each NVMe drive, resulting in up to 4 GBps overall throughput
Advanced ECC Engine and End-to-End Data Protection
Samsung 32 layer V-NAND stacks the vertical NAND layers in three dimensions, solving the cell-to-cell interference that causes data corruption in planar NAND.
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture
Supports Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T)